Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs

We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices.We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple- Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.