The continuously evolving MEMS technology for RF/microwave applications poses issues regarding new reliability and lifetime estimation. We overview the most important degradation mechanisms concerning capacitive and ohmic RF-MEMS devices and their effects on the device lifetime. Preliminary results are also given on electrostatic discharge effects on ohmic shunt switches adopting a transmission line pulse stress technique.

Reliability of RF-MEMS

TAZZOLI, AUGUSTO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2005

Abstract

The continuously evolving MEMS technology for RF/microwave applications poses issues regarding new reliability and lifetime estimation. We overview the most important degradation mechanisms concerning capacitive and ohmic RF-MEMS devices and their effects on the device lifetime. Preliminary results are also given on electrostatic discharge effects on ohmic shunt switches adopting a transmission line pulse stress technique.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2447930
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