Silicon diodes processed by CNM on standard and oxygenated silicon substrates have been irradiated by 58MeV lithium ions. The radiation-induced effects are very similar to the one observed after proton irradiation: substrate space charge sign inversion (SCSI), lower increase of the effective substrate doping concentration after SCSI for the oxygenated devices. The experimental radiation hardness factor has been determined to be 45.01, within 8.2% with the expected value. These results suggest that 58MeV Li ions are a suitable radiation source for radiation hardness studies by ions heavier than protons for the future very high luminosity hadron colliders.

Lithium ion-induced damage in silicon detectors

CANDELORI, ANDREA;BISELLO, DARIO;GIUBILATO, PIERO;RANDO, RICCARDO;
2004

Abstract

Silicon diodes processed by CNM on standard and oxygenated silicon substrates have been irradiated by 58MeV lithium ions. The radiation-induced effects are very similar to the one observed after proton irradiation: substrate space charge sign inversion (SCSI), lower increase of the effective substrate doping concentration after SCSI for the oxygenated devices. The experimental radiation hardness factor has been determined to be 45.01, within 8.2% with the expected value. These results suggest that 58MeV Li ions are a suitable radiation source for radiation hardness studies by ions heavier than protons for the future very high luminosity hadron colliders.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2451183
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