Deep levels with activation energies up to 0.59 eV have been revealed in buried gate, n-channel 6H-silicon carbide JFETs, by means of capacitance- and current-mode deep level transient spectroscopy. Numerical device simulations of the drain-current transients following a gate-to-source voltage step have enabled us to localize the different deep levels both energetically and spatially.
Trap Energetic and Spatial Localization in Buried-Gate 6H-SiC JFET's by Means of Numerical Device Simulation
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2001
Abstract
Deep levels with activation energies up to 0.59 eV have been revealed in buried gate, n-channel 6H-silicon carbide JFETs, by means of capacitance- and current-mode deep level transient spectroscopy. Numerical device simulations of the drain-current transients following a gate-to-source voltage step have enabled us to localize the different deep levels both energetically and spatially.
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