Oxygenated and standard (not oxygenated) silicon diodes processed by two different manufacturers (ST Microelectronics and Micron Semiconductor) have been irradiated by low (27 MeV) and high- (24 GeV) energy protons. The leakage current density increase rate (α) and its annealing do not show any significant dependence on oxygenation and are the same for both manufacturers. Oxygenation improves the radiation hardness by decreasing the acceptor introduction rate (β) and mitigating the depletion voltage (Vdep) increase. Nevertheless, standard ST diodes present β values lower than Micron standard devices and close to oxygenated devices, whose βs are similar for both manufacturers. The amplitude of the Vdep reverse annealing is reduced by oxygenation, which in addition delays the electrically active defect increase, at least for high-energy protons. Oxygenation is consequently the best approach for silicon substrate radiation hardening

Low- and High-energy proton irradiations of standard and oxygenated silicon diodes

BISELLO, DARIO;CANDELORI, ANDREA;RANDO, RICCARDO;PANTANO, DEVIS;
2001

Abstract

Oxygenated and standard (not oxygenated) silicon diodes processed by two different manufacturers (ST Microelectronics and Micron Semiconductor) have been irradiated by low (27 MeV) and high- (24 GeV) energy protons. The leakage current density increase rate (α) and its annealing do not show any significant dependence on oxygenation and are the same for both manufacturers. Oxygenation improves the radiation hardness by decreasing the acceptor introduction rate (β) and mitigating the depletion voltage (Vdep) increase. Nevertheless, standard ST diodes present β values lower than Micron standard devices and close to oxygenated devices, whose βs are similar for both manufacturers. The amplitude of the Vdep reverse annealing is reduced by oxygenation, which in addition delays the electrically active defect increase, at least for high-energy protons. Oxygenation is consequently the best approach for silicon substrate radiation hardening
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2460849
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