For the first time in our knowledge a correlation between hot electrons induced degradation and cathodoluminescence (CL) signal in InA1As/InGaAs/InP HEMTs has been found. The SEM CL spectra of stressed devices reveal a clear reduction in the intensity of the signal collected from the gate-drain region, which confirms the hypothesis of traps development in such region, already supported by changes in the electrical characteristics. This technique can then be used for physical investigation of the hot electron stress damage induced in InP based HEMTs.

Cathodoluminescence from hot-electron stressed InP HEMTs

MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
1999

Abstract

For the first time in our knowledge a correlation between hot electrons induced degradation and cathodoluminescence (CL) signal in InA1As/InGaAs/InP HEMTs has been found. The SEM CL spectra of stressed devices reveal a clear reduction in the intensity of the signal collected from the gate-drain region, which confirms the hypothesis of traps development in such region, already supported by changes in the electrical characteristics. This technique can then be used for physical investigation of the hot electron stress damage induced in InP based HEMTs.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2462120
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