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EnglishTwo silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24GeV protons to fluences ranging between 2.3 and 6.3×10^14cm^-2. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060μm wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors.
| Titolo: | Charge collection efficiency of standard and oxygenated silicon microstrip detectors |
| Autori: | |
| Data di pubblicazione: | 2002 |
| Rivista: | |
| Abstract: | Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24GeV protons to fluences ranging between 2.3 and 6.3×10^14cm^-2. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060μm wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors. |
| Handle: | http://hdl.handle.net/11577/2463363 |
| Appare nelle tipologie: | 01.01 - Articolo in rivista |
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