Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24GeV protons to fluences ranging between 2.3 and 6.3×10^14cm^-2. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060μm wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors.

Charge collection efficiency of standard and oxygenated silicon microstrip detectors

RANDO, RICCARDO;BISELLO, DARIO;CANDELORI, ANDREA;
2002

Abstract

Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24GeV protons to fluences ranging between 2.3 and 6.3×10^14cm^-2. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060μm wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2463363
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact