The dc behavior of AlGaAdnGaAs PM-HEMT’s has been investigated at a low temperature. Two different failure modes have been identified according to bias conditions, consisting of: a) a dramatic collapse in the drain current ID, and b) a considerable shift in the threshold voltage VT. ID decrease is due to trapping of electrons in deep levels in the gate-drain region, while trapping under the gate is responsible for VT shift. At high VQS a recovery of the dc devices characteristics is observed, due to impact-ionization phenomena.

Recovery of Low Temperature Electron Trapping in AlGaAs/InGaAs PM-HEMTs due to Impact-Ionization

MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1995

Abstract

The dc behavior of AlGaAdnGaAs PM-HEMT’s has been investigated at a low temperature. Two different failure modes have been identified according to bias conditions, consisting of: a) a dramatic collapse in the drain current ID, and b) a considerable shift in the threshold voltage VT. ID decrease is due to trapping of electrons in deep levels in the gate-drain region, while trapping under the gate is responsible for VT shift. At high VQS a recovery of the dc devices characteristics is observed, due to impact-ionization phenomena.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2463916
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