Because of their ultra brightness, GaN light emitting diodes (LEDs) becomes a promising light sources for daily lighting. The growing market requires high reliability and long lifetime. Degradation mechanisms due to accelerated ageing in GaN LED have previously been investigated by capacitance spectroscopy or light emission mapping. In this paper low frequency noise (LFN) is used as a diagnostic tool to study degradation mechanisms in GaN LEDs submitted to accelerated ageing
Accelerated aging of GaN light emitting diodes studied by 1/f and RTS noise
MENEGHESSO, GAUDENZIO;LEVADA, SIMONE;ZANONI, ENRICO;
2005
Abstract
Because of their ultra brightness, GaN light emitting diodes (LEDs) becomes a promising light sources for daily lighting. The growing market requires high reliability and long lifetime. Degradation mechanisms due to accelerated ageing in GaN LED have previously been investigated by capacitance spectroscopy or light emission mapping. In this paper low frequency noise (LFN) is used as a diagnostic tool to study degradation mechanisms in GaN LEDs submitted to accelerated ageingFile in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
