The impact of 2 MeV protons and 10 keV X-rays radiation stresses on electrostatically actuated ohmic RF-MEMS switches has been analyzed at increasing radiation dose and during subsequent annealing at room temperature. Small variations of electrical parameters (actuation and release voltages) have been identified, accompanied by a strong rf-performances degradation. Monte Carlo TRIM simulations have been carried out to understand the mechanisms responsible of such degradations, finding that both NIEL and ionizing damages appear to play an important role.

Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

TAZZOLI, AUGUSTO;CELLERE, GIORGIO;AUTIZI, ENRICO;PERETTI, VANNI;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO
2009

Abstract

The impact of 2 MeV protons and 10 keV X-rays radiation stresses on electrostatically actuated ohmic RF-MEMS switches has been analyzed at increasing radiation dose and during subsequent annealing at room temperature. Small variations of electrical parameters (actuation and release voltages) have been identified, accompanied by a strong rf-performances degradation. Monte Carlo TRIM simulations have been carried out to understand the mechanisms responsible of such degradations, finding that both NIEL and ionizing damages appear to play an important role.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2472332
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