We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.

Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

GRIFFONI, ALESSIO;SILVESTRI, MARCO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;
2008

Abstract

We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS 2008
9781457704819
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2472719
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