We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays
GRIFFONI, ALESSIO;SILVESTRI, MARCO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;
2008
Abstract
We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.File in questo prodotto:
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