SILVESTRI, MARCO

SILVESTRI, MARCO  

Mostra records
Risultati 1 - 14 di 14 (tempo di esecuzione: 0.023 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 2007 SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDRO + - - Proceedings of the 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2007
Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments 2007 SILVESTRI, MARCOGERARDIN, SIMONE + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Gate rupture in ultra-thin gate oxides irradiated with heavy ions 2008 SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDRO + - - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 2008 SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 2008 GRIFFONI, ALESSIOSILVESTRI, MARCOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS 2008
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 2008 SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Single event gate rupture in 130-nm CMOS transistor arrays subjected to X-ray irradiation 2009 SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDRO + - - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 2009 GRIFFONI, ALESSIOSILVESTRI, MARCOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 2009 SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 2010 SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
AGEING AND IONIZING RADIATION SYNERGETIC EFFECTS IN DEEP-SUBMICRON CMOS TECHNOLOGIES 2010 Silvestri, Marco - - -
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs 2014 ROSSETTO, ISABELLARAMPAZZO, FABIANAMENEGHINI, MATTEOSILVESTRI, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 2017 M. BorgaM. MeneghiniI. RossettoM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions 2017 Alessandro BarbatoM. BarbatoM. MeneghiniM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017