The behavior of the electron impact ionization coefficient in InGaAs is measured with unprecedented sensitivity down to very low electric fields. The data are derived from the measurement of the multiplication coefficient M-1 in suitably designed heterojunction bipolar transistors. Previously available data are extended by two orders of magnitude in the low filed domain.
Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors
NEVIANI, ANDREA;ZANONI, ENRICO;
1995
Abstract
The behavior of the electron impact ionization coefficient in InGaAs is measured with unprecedented sensitivity down to very low electric fields. The data are derived from the measurement of the multiplication coefficient M-1 in suitably designed heterojunction bipolar transistors. Previously available data are extended by two orders of magnitude in the low filed domain.File in questo prodotto:
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