Charge trap investigation methodology on RF-MEMS switches

We hereby discuss effects and consequences of using certain measurements approaches on the charge trap analysis of RF-MEMS switches during cycling tests. We analyze how measurements are affected when the shape of the pulse changes, when the cycling frequency decrease and when measurements are carried out as a function of temperature. The trends here presented must to be taken into account when devices, that suffer of severe charge trapping phenomena, like those used in the following experiments, are considered. The real goal in fact, is to fully characterize the real performances of the devices separating the effects that different measurements analysis have on the device itself.