The corruption of the information stored in floating gate cells due to heavy-ion strikes is a critical issue for the use of Flash memories in space. In this work we examine how feature size scaling affects the single event upset sensitivity of multi-level floating gate cells with NAND architecture. Both experimental data on heavy-ion irradiation and analytical modeling are used to study how the threshold LET and saturation cross section depend on the cell feature size. A comparison is also carried out between multilevel and single-level floating gate cells.

Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells

BAGATIN, MARTA;GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO;
2011

Abstract

The corruption of the information stored in floating gate cells due to heavy-ion strikes is a critical issue for the use of Flash memories in space. In this work we examine how feature size scaling affects the single event upset sensitivity of multi-level floating gate cells with NAND architecture. Both experimental data on heavy-ion irradiation and analytical modeling are used to study how the threshold LET and saturation cross section depend on the cell feature size. A comparison is also carried out between multilevel and single-level floating gate cells.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2491560
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