Single event effects are investigated in 90-nm phase change memories. The cells are shown to be insensitive to heavy-ion strikes and will likely remain so for a few more generations. Possible physical mechanisms leading to upsets in future generations are discussed. Errors and functional interrupts, in addition to single event latch-up, were observed during read, word and buffer program due to strikes in the peripheral circuitry.
Single Event Effects in 90-nm Phase Change Memories
GERARDIN, SIMONE;BAGATIN, MARTA;PACCAGNELLA, ALESSANDRO;
2011
Abstract
Single event effects are investigated in 90-nm phase change memories. The cells are shown to be insensitive to heavy-ion strikes and will likely remain so for a few more generations. Possible physical mechanisms leading to upsets in future generations are discussed. Errors and functional interrupts, in addition to single event latch-up, were observed during read, word and buffer program due to strikes in the peripheral circuitry.File in questo prodotto:
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