We studied the angular dependence of heavy-ion induced errors and threshold voltage shifts in Flash memories. Combining experiments and Geant4-based simulations, we provide new insight about the sensitive volume in floating gate cells. At high LET, the sensitive volume for cells belonging to the heavy-ion induced secondary peak corresponds to a large part of the floating gate. The sensitive volume for upsets may be larger or smaller, depending on the relative position of the secondary peak with respect to the relevant reference voltage.

Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories

GERARDIN, SIMONE;BAGATIN, MARTA;PACCAGNELLA, ALESSANDRO;
2011

Abstract

We studied the angular dependence of heavy-ion induced errors and threshold voltage shifts in Flash memories. Combining experiments and Geant4-based simulations, we provide new insight about the sensitive volume in floating gate cells. At high LET, the sensitive volume for cells belonging to the heavy-ion induced secondary peak corresponds to a large part of the floating gate. The sensitive volume for upsets may be larger or smaller, depending on the relative position of the secondary peak with respect to the relevant reference voltage.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2491567
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 24
  • ???jsp.display-item.citation.isi??? 23
social impact