We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drain-to-source voltages in impact ionization regime. Degradation consists in a rapid and permanent decrease of drain current, in an increase of drain parasitic resistance and in an increase of transconductance frequency dispersion. Degradation mechanism is most likely associated with the development of deep levels in the access region between gate and drain where electric field is maximum. Our results show that this degradation can be a real concern expecially for high power devices.

Rapid degradation induced by hot electrons in AlGaAs/GaAs HEMTs

NEVIANI, ANDREA;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO
1992

Abstract

We report on the degradation induced by hot electrons when AlGaAs/GaAs HEMTS are biased at high drain-to-source voltages in impact ionization regime. Degradation consists in a rapid and permanent decrease of drain current, in an increase of drain parasitic resistance and in an increase of transconductance frequency dispersion. Degradation mechanism is most likely associated with the development of deep levels in the access region between gate and drain where electric field is maximum. Our results show that this degradation can be a real concern expecially for high power devices.
GaAs and related compounds 1992
075030250X
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2515473
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact