This paper reviews results of a study concerning the effects of hot electrons on the degradation of GaAs MESFETs and HEMTs. Gate current measurements are adopted as a tool to characterize hot electron effects. Degradation consists of a decrease of drain current and is correlated to the gate current to drain current ratio.

Reliability issues due to hot-electron effects in GaAs-based MESFETs and HEMTs

ZANONI, ENRICO;NEVIANI, ANDREA;MENEGHESSO, GAUDENZIO
1994

Abstract

This paper reviews results of a study concerning the effects of hot electrons on the degradation of GaAs MESFETs and HEMTs. Gate current measurements are adopted as a tool to characterize hot electron effects. Degradation consists of a decrease of drain current and is correlated to the gate current to drain current ratio.
Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
1566770327
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2515514
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