On- and off- state breakdown effects in composite channel and conventional InP-based HEMTs are studied by means of electrical measurements, and electroluminescence spectroscopy. We demonstrate that channel quantization increases off-state and on-state breakdown voltage. The temperature coefficient of the electron impact ionization rate in In 0.53Ga 0.47As has been studied. Differently from what happens in GaAs-based devices, carrier multiplication increases on increasing the temperature.

Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTsInternational Electron Devices Meeting. Technical Digest

MENEGHESSO, GAUDENZIO;NEVIANI, ANDREA;ZANONI, ENRICO
1996

Abstract

On- and off- state breakdown effects in composite channel and conventional InP-based HEMTs are studied by means of electrical measurements, and electroluminescence spectroscopy. We demonstrate that channel quantization increases off-state and on-state breakdown voltage. The temperature coefficient of the electron impact ionization rate in In 0.53Ga 0.47As has been studied. Differently from what happens in GaAs-based devices, carrier multiplication increases on increasing the temperature.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2521066
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