This paper reports on the experimental evidences of hot electrons induced degradations of AlGaN/GaN HEMTs submitted to on-state stress tests. Thanks to the use of a combined electrical and electroluminescence characterization we demonstrate that: (a) exposure of devices to on-state stress can induce a remarkable decrease in drain current; (b) drain current degradation is due to electron trapping induced by hot electrons in the gate-drain access region; (c) degradation rate strongly depends on the intensity of the EL signal emitted by the devices during stress, while it has a negligible dependence on temperature. Finally, we derived an accelerated degradation law for GaN HEMT submitted to accelerated bias test, by using the intensity of the EL signal as a measure of the stress acceleration factor.

Hot electrons and time-to-breakdown induced degradation in AlGaN/GaN HEMTs

ZANONI, ENRICO;MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO
2012

Abstract

This paper reports on the experimental evidences of hot electrons induced degradations of AlGaN/GaN HEMTs submitted to on-state stress tests. Thanks to the use of a combined electrical and electroluminescence characterization we demonstrate that: (a) exposure of devices to on-state stress can induce a remarkable decrease in drain current; (b) drain current degradation is due to electron trapping induced by hot electrons in the gate-drain access region; (c) degradation rate strongly depends on the intensity of the EL signal emitted by the devices during stress, while it has a negligible dependence on temperature. Finally, we derived an accelerated degradation law for GaN HEMT submitted to accelerated bias test, by using the intensity of the EL signal as a measure of the stress acceleration factor.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2522410
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