In this work we have characterized and studied the impact-ionization-induced instabilities in the output characteristics of these devices. The instabilities appear as an increase of the output conductance, gD. Based on the value of gD, the output characteristics can be separated into three different regions, each corresponding to a different impact ionization regime: Region I, no impact-ionization and very low values of gD; Region II, starting of impact-ionization regime (pre-avalanche) and corresponding slight increase of gD; Region III, onset of carrier avalanche and consequent large increase in gD. In support of this picture we observed the same correlation between impact ionization and gD also changing device biasing and temperature.
Study of breakdown mechanism in 2D MESFET’s
MENEGHESSO, GAUDENZIO;NEVIANI, ANDREA;ZANONI, ENRICO
1997
Abstract
In this work we have characterized and studied the impact-ionization-induced instabilities in the output characteristics of these devices. The instabilities appear as an increase of the output conductance, gD. Based on the value of gD, the output characteristics can be separated into three different regions, each corresponding to a different impact ionization regime: Region I, no impact-ionization and very low values of gD; Region II, starting of impact-ionization regime (pre-avalanche) and corresponding slight increase of gD; Region III, onset of carrier avalanche and consequent large increase in gD. In support of this picture we observed the same correlation between impact ionization and gD also changing device biasing and temperature.Pubblicazioni consigliate
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