The retention of floating gate cells is studied up to one year after heavy-ion exposure, without using accelerated tests. Cross-sections of retention errors and threshold voltage shifts are discussed and compared with previous generation devices. The dependence of retention errors on the program level and irradiation angle is discussed and the underlying mechanisms are examined.
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions
BAGATIN, MARTA;GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO
2012
Abstract
The retention of floating gate cells is studied up to one year after heavy-ion exposure, without using accelerated tests. Cross-sections of retention errors and threshold voltage shifts are discussed and compared with previous generation devices. The dependence of retention errors on the program level and irradiation angle is discussed and the underlying mechanisms are examined.File in questo prodotto:
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