GaN on SiC HEMTs fabricated with different gate-connected field plate structures have been tested by means of RF reliability tests. The increase in field-plate length yielded an improvement of both the dynamic and the reliability performance during RF testing. Results are thus suggesting that reliability in field-plate devices can be improved by a proper design of the field-plate geometry. © 2013 Elsevier Ltd. All rights reserved.
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2013
Abstract
GaN on SiC HEMTs fabricated with different gate-connected field plate structures have been tested by means of RF reliability tests. The increase in field-plate length yielded an improvement of both the dynamic and the reliability performance during RF testing. Results are thus suggesting that reliability in field-plate devices can be improved by a proper design of the field-plate geometry. © 2013 Elsevier Ltd. All rights reserved.
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