We study the response of NAND Flash memories to neutron and alpha particle exposure, on both Single-and Multi-Level Cell architectures manufactured in sub 30-nm technologies. We analyze the error rates and identify the relative importance of neutrons and alphas in the terrestrial environment and at aircraft altitudes, with both low-alpha and ultra-low-alpha materials. The efficacy of error correction codes is illustrated. Scaling trends are then discussed and modeled in single-level and multi-level cell devices.

Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories

GERARDIN, SIMONE;BAGATIN, MARTA;PACCAGNELLA, ALESSANDRO;
2014

Abstract

We study the response of NAND Flash memories to neutron and alpha particle exposure, on both Single-and Multi-Level Cell architectures manufactured in sub 30-nm technologies. We analyze the error rates and identify the relative importance of neutrons and alphas in the terrestrial environment and at aircraft altitudes, with both low-alpha and ultra-low-alpha materials. The efficacy of error correction codes is illustrated. Scaling trends are then discussed and modeled in single-level and multi-level cell devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2932107
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