We study the response of NAND Flash memories to neutron and alpha particle exposure, on both Single-and Multi-Level Cell architectures manufactured in sub 30-nm technologies. We analyze the error rates and identify the relative importance of neutrons and alphas in the terrestrial environment and at aircraft altitudes, with both low-alpha and ultra-low-alpha materials. The efficacy of error correction codes is illustrated. Scaling trends are then discussed and modeled in single-level and multi-level cell devices.
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories
GERARDIN, SIMONE;BAGATIN, MARTA;PACCAGNELLA, ALESSANDRO;
2014
Abstract
We study the response of NAND Flash memories to neutron and alpha particle exposure, on both Single-and Multi-Level Cell architectures manufactured in sub 30-nm technologies. We analyze the error rates and identify the relative importance of neutrons and alphas in the terrestrial environment and at aircraft altitudes, with both low-alpha and ultra-low-alpha materials. The efficacy of error correction codes is illustrated. Scaling trends are then discussed and modeled in single-level and multi-level cell devices.File in questo prodotto:
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