The feasibility of a 3-D-NAND-Flash-based heavy-ion detector is explored. The possibility of measuring the angle of incidence and the linear energy transfer (LET) of impinging particles by studying the pattern of the threshold voltage shifts along the track of the affected cells is discussed. The results of the experiments with different beams (both directly and indirectly ionizing) are illustrated. A set of Monte Carlo simulations is also presented, to study sensitive volumes on 3-D NAND floating gate cells and explore the possibility of distinguishing the effects generated by ionizing particles with different features, such as LET and angle of incidence.

A Heavy-Ion Detector Based on 3-D NAND Flash Memories

Bagatin M.
;
Gerardin S.;Paccagnella A.;
2020

Abstract

The feasibility of a 3-D-NAND-Flash-based heavy-ion detector is explored. The possibility of measuring the angle of incidence and the linear energy transfer (LET) of impinging particles by studying the pattern of the threshold voltage shifts along the track of the affected cells is discussed. The results of the experiments with different beams (both directly and indirectly ionizing) are illustrated. A set of Monte Carlo simulations is also presented, to study sensitive volumes on 3-D NAND floating gate cells and explore the possibility of distinguishing the effects generated by ionizing particles with different features, such as LET and angle of incidence.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3338066
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