The sensitivity of 3D managed NAND Flash memories to single event effects induced by wide-energy spectrum neutrons has been investigated. The analysis considers both the multi-chip architecture and the role of memory management data structures in shaping the device soft error rate. Experimental irradiation results are presented, highlighting the different failure modes observed, with particular emphasis on single-event functional interrupts and user data corruption. In-situ and post-exposure analysis show that most of the issues arise from the underlying raw Flash NAND, whereas, thanks to the implemented mitigation strategies, the other components do not impact significantly.
Neutron-induced Single Event Effects in 3D Managed NAND Memories
Bagatin, M.;Gerardin, S.
2026
Abstract
The sensitivity of 3D managed NAND Flash memories to single event effects induced by wide-energy spectrum neutrons has been investigated. The analysis considers both the multi-chip architecture and the role of memory management data structures in shaping the device soft error rate. Experimental irradiation results are presented, highlighting the different failure modes observed, with particular emphasis on single-event functional interrupts and user data corruption. In-situ and post-exposure analysis show that most of the issues arise from the underlying raw Flash NAND, whereas, thanks to the implemented mitigation strategies, the other components do not impact significantly.
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