SILVESTRIN, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 2.315
EU - Europa 245
AS - Asia 170
SA - Sud America 5
OC - Oceania 3
Totale 2.738
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Nazione #
US - Stati Uniti d'America 2.313
CN - Cina 116
IT - Italia 96
VN - Vietnam 47
FI - Finlandia 38
GB - Regno Unito 26
DE - Germania 25
SE - Svezia 21
IE - Irlanda 18
UA - Ucraina 5
BR - Brasile 3
CH - Svizzera 3
FR - Francia 3
SG - Singapore 3
AU - Australia 2
CA - Canada 2
LT - Lituania 2
NL - Olanda 2
RU - Federazione Russa 2
CL - Cile 1
CZ - Repubblica Ceca 1
EE - Estonia 1
ES - Italia 1
IN - India 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PE - Perù 1
SI - Slovenia 1
TH - Thailandia 1
TR - Turchia 1
Totale 2.738
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Città #
Fairfield 447
Houston 267
Woodbridge 238
Chandler 214
Ann Arbor 168
Seattle 166
Ashburn 153
Cambridge 139
Wilmington 117
Dong Ket 46
Beijing 42
Princeton 38
Des Moines 36
Medford 30
San Diego 23
Roxbury 20
Dublin 18
Nanjing 17
Boardman 13
Helsinki 13
Jacksonville 13
Shenyang 12
London 9
Changsha 8
Legnaro 8
Cagliari 6
Nanchang 6
Padova 6
New York 5
Venice 5
Guangzhou 4
Hebei 4
Rome 4
Tianjin 4
Chiswick 3
Mestre 3
Milan 3
Munich 3
San Francisco 3
São Paulo 3
Taizhou 3
Avezzano 2
Borås 2
Cassino 2
Castiglione Delle Stiviere 2
Dalmine 2
Hangzhou 2
Jiaxing 2
Piazzola sul Brenta 2
Pisa 2
San Giorgio delle Pertiche 2
Shanghai 2
Siena 2
Singapore 2
Turin 2
Zhengzhou 2
Adelaide 1
Amsterdam 1
Arzignano 1
Auckland 1
Bangkok 1
Baotou 1
Canberra 1
Cesena 1
Cupertino 1
Delhi 1
Den Haag 1
Dongguan 1
Frankfurt am Main 1
Granada 1
Hanoi 1
Islington 1
Jinan 1
Kharkiv 1
Kilburn 1
Kuala Lumpur 1
Lappeenranta 1
Lima 1
Los Angeles 1
Monza 1
Ningbo 1
Norwalk 1
Paris 1
Potomac 1
Prescot 1
Ravenna 1
Redwood City 1
Reggio Calabria 1
Rockville 1
Sežana 1
Taiyuan 1
Tallinn 1
Toronto 1
Verbania 1
Vicenza 1
Totale 2.389
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Nome #
A time-resolved IBICC experiment using the IEEM of the SIRAD facility 124
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs 116
The SIRAD irradiation facility at LNL 107
Radiation tolerance of a moderate resistivity substrate in a modern CMOS process 105
CMOS sensors in 90nm fabricated on high resistivity wafers: Design concept and irradiation results 105
First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM 103
Performance of the SIRAD ion electron emission microscope 98
Detection efficiency and spatial resolution of the SIRAD ion electron emission microscope 97
SPES and the neutron facilities at Laboratori Nazionali di Legnaro 96
Monolithic pixels on moderate resistivity substrate and sparsifying readout architecture 95
A neutron-induced Single Event Effects facility at the 70 MeV cyclotron of LNL-INFN 92
A new irradiation facility for neutron-induced Single Event Effect studies at LNL 92
SPES: A new cyclotron-based facility for research and applications with high-intensity beams 89
LePIX: first results from a novel monolithic pixel sensor 88
Ion Impact Detection and Micromapping With a SDRAM for IEEM Diagnostics and Applications 88
Neutron production targets for a new Single Event Effects facility at the 70 MeV Cyclotron of LNL-INFN 87
Single-event upset tests on the readout electronics for the pixel detectors of the PANDA experiment 84
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 83
Secondary electron yield of Au and Al2O3 surfaces from swift heavy ion impact in the 2.5-7.9 MeV/amu energy range 79
Calorimeter prototyping for the iMPACT project pCT scanner 77
The QMN beam line of the neutron-induced Single Event Effects facility at the 70 MeV cyclotron of LNL-INFN 75
Radiation tolerance of a moderate resistivity substrate in a modern CMOS process 73
Characterization of Electronic Circuits with the SIRAD IEEM: Developments and First Results 73
ANEM: The future neutron production target for Single Event Effect studies at LNL 71
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT 68
Study of Single Event transients on the VELA ASIC, x-ray detectors FEE for new generation astronomical instruments 67
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation 67
Radiation tolerance characterization of Geiger-mode CMOS avalanche diodes for a dual-layer particle detector 63
Radiation hardness assurance of the CLARO8 front-end chip for the LHCb RICH detector upgrade 62
A fast and radiation-hard single-photon counting ASIC for the upgrade of the LHCb RICH detector at CERN 62
Radiation Hardness of the CLARO8 ASIC: a Fast Single-Photon Counting Chip for the LHCb Experiment at CERN 50
ANEM: a rotating composite neutron production target for Single Event Effects Studies at the 70 MeV Cyclotron of LNL-INFN 38
Nuclear physics midterm plan at Legnaro National Laboratories (LNL) 30
APiX, a two-tier avalanche pixel sensor for digital charged particle detection 29
Status and prospects of the SIRAD irradiation facility for radiation effects studies at LNL2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 25
Evaluation of UVC Excimer Lamp (222 nm) Efficacy for Coronavirus Inactivation in an Animal Model 11
Studio in vivo dell’efficacia di un sistema di lampade a UVC a 222 NM per l’inattivazione del virus della bronchite infettiva 2
Measurements of radiation effects in an antifuse FPGA 2
Totale 2.773
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Categoria #
all - tutte 9.625
article - articoli 6.951
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.576
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019215 0 0 0 0 0 0 0 0 0 0 113 102
2019/2020586 78 15 14 35 66 45 66 69 81 74 26 17
2020/2021439 20 21 8 21 22 78 25 24 91 14 41 74
2021/2022479 8 57 69 41 24 9 20 62 17 9 42 121
2022/2023436 67 56 23 35 73 59 2 28 67 3 22 1
2023/2024167 11 45 25 18 13 13 13 17 3 9 0 0
Totale 2.773