MUKHERJEE, KALPARUPA
 Distribuzione geografica
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Continente #
EU - Europa 883
NA - Nord America 749
AS - Asia 380
AF - Africa 127
SA - Sud America 100
OC - Oceania 13
Continente sconosciuto - Info sul continente non disponibili 7
Totale 2.259
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Nazione #
US - Stati Uniti d'America 691
IE - Irlanda 582
SG - Singapore 128
BR - Brasile 66
HK - Hong Kong 62
CN - Cina 59
IT - Italia 58
PL - Polonia 34
DE - Germania 21
VN - Vietnam 19
FI - Finlandia 18
RU - Federazione Russa 18
GB - Regno Unito 17
FR - Francia 16
AR - Argentina 11
AT - Austria 10
CI - Costa d'Avorio 9
LU - Lussemburgo 9
AO - Angola 8
NL - Olanda 8
EG - Egitto 7
SE - Svezia 7
CH - Svizzera 6
DK - Danimarca 6
GT - Guatemala 6
IQ - Iraq 6
IR - Iran 6
KE - Kenya 6
KG - Kirghizistan 6
NE - Niger 6
RO - Romania 6
TN - Tunisia 6
TR - Turchia 6
BG - Bulgaria 5
DZ - Algeria 5
HT - Haiti 5
HU - Ungheria 5
IN - India 5
JM - Giamaica 5
JO - Giordania 5
JP - Giappone 5
LA - Repubblica Popolare Democratica del Laos 5
MG - Madagascar 5
PA - Panama 5
TZ - Tanzania 5
UG - Uganda 5
YE - Yemen 5
YT - Mayotte 5
CA - Canada 4
CL - Cile 4
CO - Colombia 4
CY - Cipro 4
CZ - Repubblica Ceca 4
ET - Etiopia 4
ID - Indonesia 4
LV - Lettonia 4
MK - Macedonia 4
MU - Mauritius 4
MX - Messico 4
MZ - Mozambico 4
NC - Nuova Caledonia 4
PF - Polinesia Francese 4
PS - Palestinian Territory 4
PY - Paraguay 4
SA - Arabia Saudita 4
SK - Slovacchia (Repubblica Slovacca) 4
SO - Somalia 4
TH - Thailandia 4
UA - Ucraina 4
XK - ???statistics.table.value.countryCode.XK??? 4
ZM - Zambia 4
AD - Andorra 3
AM - Armenia 3
BE - Belgio 3
BO - Bolivia 3
BS - Bahamas 3
BY - Bielorussia 3
BZ - Belize 3
CR - Costa Rica 3
CU - Cuba 3
CW - ???statistics.table.value.countryCode.CW??? 3
EE - Estonia 3
GE - Georgia 3
GF - Guiana Francese 3
GM - Gambi 3
HN - Honduras 3
HR - Croazia 3
IL - Israele 3
KR - Corea 3
LC - Santa Lucia 3
LY - Libia 3
ML - Mali 3
NG - Nigeria 3
NO - Norvegia 3
NP - Nepal 3
PH - Filippine 3
TW - Taiwan 3
AF - Afghanistan, Repubblica islamica di 2
AL - Albania 2
AZ - Azerbaigian 2
Totale 2.175
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Città #
Dublin 580
Singapore 85
Ashburn 82
Fairfield 78
Hong Kong 61
Chandler 57
Santa Clara 52
Leesburg 34
Padova 31
Cambridge 30
Houston 29
Bytom 28
Beijing 26
Woodbridge 25
Seattle 22
Boardman 20
Ann Arbor 17
Wilmington 16
Medford 14
Princeton 14
San Diego 14
Des Moines 11
Helsinki 9
New York 9
São Paulo 9
Abidjan 8
Chicago 8
London 8
Los Angeles 8
Luanda 8
Council Bluffs 7
Ho Chi Minh City 7
Munich 7
Buffalo 6
Luxembourg 6
Nairobi 6
Niamey 6
Vienna 6
Washington 6
Amman 5
Antananarivo 5
Bishkek 5
Guangzhou 5
Guatemala City 5
Kampala 5
Turin 5
Vientiane 5
Addis Ababa 4
Brooklyn 4
Dallas 4
Hanoi 4
Lusaka 4
Mamoudzou 4
Maputo 4
Noumea 4
Nuremberg 4
Panama City 4
Papeete 4
Riese Pio X 4
Sanaa 4
Shanghai 4
Skopje 4
Turku 4
Amsterdam 3
Andorra la Vella 3
Antakya 3
Campinas 3
Castries 3
Charlotte 3
Copenhagen 3
Dar es Salaam 3
Haiphong 3
Havana 3
Kharkiv 3
Lagos 3
Lappeenranta 3
Limassol 3
Lomas de Zamora 3
Port Louis 3
Port-au-Prince 3
Poznan 3
Prague 3
Redondo Beach 3
Riga 3
Tokyo 3
Algiers 2
Antwerp 2
Athens 2
Bamako 2
Bangkok 2
Banjul 2
Biên Hòa 2
Boston 2
Brescia 2
Budapest 2
Chisinau 2
Ciudad del Este 2
Cotonou 2
Curitiba 2
Dakar 2
Totale 1.650
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Nome #
Vertical GaN devices: Process and reliability 413
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 249
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 151
Study and characterization of GaN MOS capacitors: Planar vs trench topographies 148
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 137
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 127
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 120
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 110
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 110
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 105
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 104
Use of bilayer gate insulator in gan-on-si vertical trench mosfets: Impact on performance and reliability 102
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: The road to reliable vertical MOSFETs 94
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 89
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 87
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 69
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 65
Totale 2.280
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Categoria #
all - tutte 7.663
article - articoli 5.349
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.012
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202193 0 0 0 10 0 0 7 10 12 6 21 27
2021/2022186 0 10 52 16 2 12 11 16 15 8 8 36
2022/2023424 20 10 38 34 38 20 75 44 32 17 55 41
2023/2024396 68 73 53 60 52 56 2 2 3 9 8 10
2024/2025446 1 21 11 31 50 39 28 37 26 20 74 108
2025/2026646 80 147 228 191 0 0 0 0 0 0 0 0
Totale 2.280