MUKHERJEE, KALPARUPA

MUKHERJEE, KALPARUPA  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 2019 Kalparupa MukherjeeMatteo BorgaMaria RuzzarinGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 2019 Mukherjee K.De Santi C.Rzin M.Gao Z.Meneghesso G.Meneghini M.Zanoni E. MICROELECTRONICS RELIABILITY - -
Use of bilayer gate insulator in gan-on-si vertical trench mosfets: Impact on performance and reliability 2020 Mukherjee K.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + MATERIALS - -
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 2020 Santi C. D.Mukherjee K.Zanoni E.Meneghini M. + - - ASDAM 2020 - Proceedings: 13th International Conference on Advanced Semiconductor Devices and Microsystems
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 2020 Fabris, ElenaDe Santi, CarloCaria, AlessandroMukherjee, KalparupaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 2020 Mukherjee, KalparupaDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, MatteoBorga, Matteo + - - IEEE International Reliability Physics Symposium Proceedings
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 2020 Mukherjee K.Borga M.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 2020 Borga M.Mukherjee K.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 2021 Mukherjee K.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MATERIALS - -
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 2021 Roccato N.Piva F.Santi C. D.Mukherjee K.Buffolo M.Verzellesi G.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Vertical GaN devices: Process and reliability 2021 Mukherjee K.De Santi C.Meneghini M.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: The road to reliable vertical MOSFETs 2021 Mukherjee K.De Santi C.Buffolo M.Gerosa A.Meneghesso G.Zanoni E.Meneghini M. + MICROMACHINES - -
Study and characterization of GaN MOS capacitors: Planar vs trench topographies 2022 K. MukherjeeC. De SantiG. MeneghessoE. ZanoniM. Meneghini + APPLIED PHYSICS LETTERS - -
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 2022 Buffolo, MRoccato, NPiva, FDe Santi, CCasu, CCaria, AMukherjee, KMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12022, Light-Emitting Devices, Materials, and Applications XXVI