CASU, CLAUDIA
 Distribuzione geografica
Continente #
NA - Nord America 103
EU - Europa 77
AS - Asia 37
Totale 217
Nazione #
US - Stati Uniti d'America 103
IT - Italia 63
CN - Cina 16
IN - India 7
CH - Svizzera 3
DE - Germania 3
IE - Irlanda 3
IR - Iran 3
KR - Corea 3
FI - Finlandia 2
GB - Regno Unito 2
JP - Giappone 2
PH - Filippine 2
TW - Taiwan 2
HK - Hong Kong 1
IL - Israele 1
UA - Ucraina 1
Totale 217
Città #
Padova 48
Ashburn 26
Chandler 15
Beijing 9
New Delhi 5
Milan 4
New York 4
Turin 4
Fairfield 3
San Diego 3
Shanghai 3
Davao City 2
Helsinki 2
Medford 2
Ogden 2
Paderno Dugnano 2
Paese 2
Princeton 2
Pune 2
Sassari 2
Washington 2
Atlanta 1
Bremblens 1
Cheonan 1
Chiswick 1
Des Moines 1
Dublin 1
Gland 1
Hamburg 1
Hong Kong 1
Hounslow 1
Houston 1
Jerusalem 1
Kharkiv 1
Kochi 1
Los Angeles 1
Montegrotto Terme 1
Phoenix 1
Pohang 1
Roxbury 1
Seoul 1
Tokyo 1
Zurich 1
Totale 166
Nome #
III-N optoelectronics: defects, reliability and challenges 44
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 34
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 24
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode 24
Study of the efficiency and reliability of GaN-based visible light emitting diode 23
Probing carrier transport and recombination processes in dichromatic GaN-based LEDs: a nonequilibrium Green’s function study 21
III-N optical devices: physical processes limiting efficiency and reliability 14
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode 12
Effects of the generation and relocation of defects during the aging process of InGaN-based multi quantum well light emitting diodes 9
Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes 9
Investigation on the optical stability during ageing of InGaN-based light emitting diode 8
Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study 6
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode 1
Totale 229
Categoria #
all - tutte 1.768
article - articoli 703
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.471


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202218 0 0 0 0 0 0 4 0 0 0 10 4
2022/202382 5 0 2 2 9 7 12 13 19 0 8 5
2023/2024129 8 13 9 11 14 13 9 3 33 16 0 0
Totale 229