FAVERO, DAVIDE
 Distribuzione geografica
Continente #
EU - Europa 277
AS - Asia 32
NA - Nord America 31
Totale 340
Nazione #
IE - Irlanda 213
IT - Italia 41
US - Stati Uniti d'America 31
CN - Cina 16
GB - Regno Unito 9
KR - Corea 9
BE - Belgio 6
TW - Taiwan 4
FI - Finlandia 3
DK - Danimarca 2
NL - Olanda 2
TH - Thailandia 2
DE - Germania 1
JP - Giappone 1
Totale 340
Città #
Dublin 213
Padova 14
Beijing 8
Dongjak-gu 8
Ashburn 6
London 6
Guangzhou 4
Leuven 4
Parma 4
Sarcedo 4
Chandler 3
Milan 3
Arzignano 2
Bangkok 2
Chiswick 2
Dongguan 2
Foshan 2
Halfweg 2
Lappeenranta 2
Modena 2
Naples 2
New Taipei 2
Odense 2
Taichung 2
Treviso 2
Azzano Decimo 1
Boardman 1
Helsinki 1
Herent 1
Hwaseong-si 1
Limbiate 1
Montecchio Maggiore 1
Ravenna 1
Toyonaka 1
Washington 1
Totale 313
Nome #
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 233
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 36
Review on the degradation of GaN-based lateral power transistors 22
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 20
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 14
GaN Vertical Devices: challenges for high performance and stability 12
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 8
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 2
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress 1
Totale 348
Categoria #
all - tutte 1.298
article - articoli 450
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.748


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202389 0 0 4 1 0 2 2 1 12 8 29 30
2023/2024259 30 39 50 38 30 25 18 8 18 3 0 0
Totale 348