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EnglishThe hole multiplication factor in pnp In0.52Al0.48 As/In0.53Ga0.47As single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature
| Titolo: | Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Abstract: | The hole multiplication factor in pnp In0.52Al0.48 As/In0.53Ga0.47As single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature |
| Handle: | http://hdl.handle.net/11577/1353925 |
| ISBN: | 0780363205 |
| Appare nelle tipologie: | 04.01 - Contributo in atti di convegno |
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