CHINI, ALESSANDRO

CHINI, ALESSANDRO  

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Risultati 1 - 20 di 32 (tempo di esecuzione: 0.033 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
2.1 A/mm current density AlGaN/GaN HEMT 2003 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICOBUTTARI, DARIO + ELECTRONICS LETTERS - -
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation 2017 Meneghesso G.Verzellesi G.Chini A. + - - International Reliability Physics Symposium
Characterization and reliability of InP-based HEMTs implemented with different process options 2000 MENEGHESSO, GAUDENZIOBUTTARI, DARIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 2001 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Characterization of GaN-based metal-semiconductor field-effect transistors by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 2002 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
Current Collapse in AlGaN/GaN HEMTs 2001 CHINI, ALESSANDROBUTTARI, DARIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Deep traps related effects in GaN MESFETs grown on sapphire substrate 2000 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Deep-Level Characterization in 6H-SiC JFETs by Means of Two-Dimensional Device Simulations 2002 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Dependence of Impact Ionization and Kink on Surface-Deep-Level Dynamics in AlGaAs/GaAs HFETs 2001 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Diagnosis of trapping phenomena in GaN MESFETs 2000 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 2011 BISI, DAVIDECHINI, ALESSANDRO + - - 20th European Heterostructure Technology meeting
Electrostatic discharge and electrical overstress on GaN/InGaN Light Emitting Diodes 2001 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 2002 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOCHINI, ALESSANDROBUTTARI, DARIOZANONI, ENRICO + - - -
GaN-based power devices: Physics, reliability, and perspectives 2021 Meneghini M.De Santi C.Buffolo M.Chini A.Medjdoub F.Meneghesso G.Verzellesi G.Zanoni E. + JOURNAL OF APPLIED PHYSICS - -
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 2000 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 2001 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Instabilities and degradation in GaN-based devices 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 2001 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 2001 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -