CHINI, ALESSANDRO

CHINI, ALESSANDRO  

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Risultati 1 - 20 di 32 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Deep traps related effects in GaN MESFETs grown on sapphire substrate 2000 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Characterization and reliability of InP-based HEMTs implemented with different process options 2000 MENEGHESSO, GAUDENZIOBUTTARI, DARIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 2000 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Parasitic effects and long term stability of InP-based HEMTs 2000 MENEGHESSO, GAUDENZIOBUTTARI, DARIOCHINI, ALESSANDROZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Diagnosis of trapping phenomena in GaN MESFETs 2000 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 2001 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 2001 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Current Collapse in AlGaN/GaN HEMTs 2001 CHINI, ALESSANDROBUTTARI, DARIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 2001 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 2001 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Electrostatic discharge and electrical overstress on GaN/InGaN Light Emitting Diodes 2001 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Dependence of Impact Ionization and Kink on Surface-Deep-Level Dynamics in AlGaAs/GaAs HFETs 2001 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 2001 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Trap-Related Effects in 6H-SiC Buried-Gate JFET's 2001 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 2001 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Deep-Level Characterization in 6H-SiC JFETs by Means of Two-Dimensional Device Simulations 2002 MENEGHESSO, GAUDENZIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 2002 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOCHINI, ALESSANDROBUTTARI, DARIOZANONI, ENRICO + - - -
Characterization of GaN-based metal-semiconductor field-effect transistors by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 2002 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
Systematic characterization of Cl<sub>2</sub> reactive ion etching for gate recessing in AlGaN/GaN HEMTs 2002 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 2002 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -