With this paper we present an analysis of the physical processes responsible for leakage current conduction and reverse-bias luminescence in InGaN-based green Light-Emitting Diodes (LEDs). The analysis was carried out by means of combined electrical and optical measurements. The results of this study indicate that: (i) the main mechanism responsible for reverse-bias current conduction is tunneling, possibly involving structural defects; (ii) the LEDs can emit light when submitted to reverse-bias; (iii) the intensity of reverse-bias luminescence is directly correlated to the reverse current level; (iv) reverse-bias emission is localized around specific spots, that represent preferential paths for leakage current conduction; (v) reverse-bias luminescence is due to carrier recombination taking place in the quantum-well region.

Analysis of the physical mechanisms responsible for leakage current and reverse-bias luminescence in green LEDs

MENEGHINI, MATTEO;TRIVELLIN, NICOLA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2009

Abstract

With this paper we present an analysis of the physical processes responsible for leakage current conduction and reverse-bias luminescence in InGaN-based green Light-Emitting Diodes (LEDs). The analysis was carried out by means of combined electrical and optical measurements. The results of this study indicate that: (i) the main mechanism responsible for reverse-bias current conduction is tunneling, possibly involving structural defects; (ii) the LEDs can emit light when submitted to reverse-bias; (iii) the intensity of reverse-bias luminescence is directly correlated to the reverse current level; (iv) reverse-bias emission is localized around specific spots, that represent preferential paths for leakage current conduction; (v) reverse-bias luminescence is due to carrier recombination taking place in the quantum-well region.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2373368
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