With this work we have performed a specific set of experiments, in order to analyze the degradation of 1Watt InGaN/GaN LEDs emitting at 420 nm produced by SemiLeds. LEDs have been subjected to 350mA dc current stress at different temperatures, ranging from 60 to 100°C; stress time is up to 500hrs. A complete optical, electrical and capacitive device characterization has been carried out during ageing at predefined time steps.
Ageing mechanisms of 420nm GaN HBLED
TRIVELLIN, NICOLA;MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2010
Abstract
With this work we have performed a specific set of experiments, in order to analyze the degradation of 1Watt InGaN/GaN LEDs emitting at 420 nm produced by SemiLeds. LEDs have been subjected to 350mA dc current stress at different temperatures, ranging from 60 to 100°C; stress time is up to 500hrs. A complete optical, electrical and capacitive device characterization has been carried out during ageing at predefined time steps.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
