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EnglishThe optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink ~junction temperature higher than 300 °C! has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg–H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band.
| Titolo: | Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress |
| Autori: | |
| Data di pubblicazione: | 2004 |
| Rivista: | |
| Abstract: | The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink ~junction temperature higher than 300 °C! has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg–H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band. |
| Handle: | http://hdl.handle.net/11577/2429015 |
| Appare nelle tipologie: | 01.01 - Articolo in rivista |
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