A detailed characterization of 75 nm recessed gate AlGaN/GaN HEMTs on HR-Si (111) substrate is reported. Devices feature record performances with a maximum fMAX of 170 GHz and a DC peak transconductance of 520 mS/mm. These values demonstrate a clear improvement over non-recessed devices, setting a new record for fMAX in fully-passivated GaN-on-silicon HEMTs. Electroluminescence (EL) measurements reveal the presence of hot electrons. Finally, trapping phenomena have been investigated in detail: no significant trapping phenomena related to bulk traps was identified, confirming an excellent epilayer quality.

Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT

MENEGHESSO, GAUDENZIO;RONCHI, NICOLO';STOCCO, ANTONIO;ZANONI, ENRICO;
2010

Abstract

A detailed characterization of 75 nm recessed gate AlGaN/GaN HEMTs on HR-Si (111) substrate is reported. Devices feature record performances with a maximum fMAX of 170 GHz and a DC peak transconductance of 520 mS/mm. These values demonstrate a clear improvement over non-recessed devices, setting a new record for fMAX in fully-passivated GaN-on-silicon HEMTs. Electroluminescence (EL) measurements reveal the presence of hot electrons. Finally, trapping phenomena have been investigated in detail: no significant trapping phenomena related to bulk traps was identified, confirming an excellent epilayer quality.
Book of Abstracts of International Workshop on Nitride semiconductors (IWN2010)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2437894
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