STOCCO, ANTONIO

STOCCO, ANTONIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 20 di 71 (tempo di esecuzione: 0.052 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 2016 DE SANTI, CARLODALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of the 8th Wide Bandgap Semiconductors and Components Workshop
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 2012 MENEGHINI, MATTEOBERTIN, MARCOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - IEDM 2012, IEEE International Electron Devices Meeting
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 2010 RONCHI, NICOLO'MENEGHINI, MATTEOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Book of abstract of Hetech 2010
An investigation of reliability on hybrid substrates GaN-HEMTs 2008 ZANON, FRANCORONCHI, NICOLO'DANESIN, FRANCESCASTOCCO, ANTONIOMENEGHESSO, GAUDENZIO + - - -
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 2010 ZANONI, ENRICOSTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANARONCHI, NICOLO'TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - 5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 2012 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 2014 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANACESTER, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Solid State Device Research Conference (ESSDERC), 2014 44th European
Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography 2010 STOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROSCOPY AND MICROANALYSIS - -
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 2011 MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. Of the 38th International Symposium on Compound Semiconductors – ISCS 2011
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 2012 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 21th European workshop on Heterostructure Technology, HeTech 2012
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 2011 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOZANONI, ENRICOBISI, DAVIDEMENEGHESSO, GAUDENZIO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013)
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - 10th Topical Workshop on Heterostructure Microelectronics
Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions 2012 ZANONI, ENRICOMENEGHINI, MATTEOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIO - - 6th Space Agency – ESA MOD Round Table Workshop on Wide Bandgap Semiconductors
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICODE SANTI CARLO + - - The International Conference of Compound Semiconductor Manufacturing Technology CS-MANTECH
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTOCESTER, ANDREARAMPAZZO, FABIANAZANONI, ENRICO - - 18th Conference of "Insulating Films on Semiconductors" (INFOS2013)