STOCCO, ANTONIO

STOCCO, ANTONIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 71 (tempo di esecuzione: 0.023 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
An investigation of reliability on hybrid substrates GaN-HEMTs 2008 ZANON, FRANCORONCHI, NICOLO'DANESIN, FRANCESCASTOCCO, ANTONIOMENEGHESSO, GAUDENZIO + - - -
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 2009 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOZANON, FRANCO - - -
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 2009 RONCHI, NICOLO'ZANON, FRANCOSTOCCO, ANTONIOTAZZOLI, AUGUSTOZANONI, ENRICOMENEGHESSO, GAUDENZIO MICROELECTRONICS RELIABILITY - -
Trap related instabilities and localized damages induced by reverse bias” 2009 ZANONI, ENRICOMENEGHESSO, GAUDENZIORAMPAZZO, FABIANAMENEGHINI, MATTEOTAZZOLI, AUGUSTODANESIN, FRANCESCAZANON, FRANCORONCHI, NICOLO'STOCCO, ANTONIO - - -
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Trap analysis on GaN HEMT after DC accelerated tests 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Reverse gate bias stress induced degradation of GaN HEMT 2009 ZANONI, ENRICOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOMENEGHESSO, GAUDENZIO + - - -
GaN Hemt Degradation induced by Reverse Gate Bias Stress 2009 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOZANONI, ENRICO + - - Proceedings of International Conference on Nitride Semiconductors (ICNS 2009)
New reliability understanding on GaN-HEMTs 2010 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHINI, MATTEOTAZZOLI, AUGUSTOZANONI, ENRICO - - The Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010,
Reliability issues of Gallium Nitride High Electron Mobility Transistors 2010 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOZANONI, ENRICO + INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES - -
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 2010 MENEGHESSO, GAUDENZIORONCHI, NICOLO'STOCCO, ANTONIOZANONI, ENRICO + - - Book of Abstracts of International Workshop on Nitride semiconductors (IWN2010)
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 2010 RONCHI, NICOLO'MENEGHINI, MATTEOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Book of abstract of Hetech 2010
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 2010 MENEGHINI, MATTEOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography 2010 STOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROSCOPY AND MICROANALYSIS - -
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 2010 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'ZANONI, ENRICO + - - WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 2010 ZANONI, ENRICOSTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANARONCHI, NICOLO'TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - 5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
High Robustness GaN HEMT Subject to Reverse Bias Stress 2010 STOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 2011 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIORAMPAZZO, FABIANASILVESTRI, RICCARDOROSSETTO, ISABELLARONCHI, NICOLO' - - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting; Boston, MA; United States; 9 October 2011 through 14 October 2011; Code 88574
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 2011 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOZANONI, ENRICOBISI, DAVIDEMENEGHESSO, GAUDENZIO + - - 20th European Heterostructure Technology meeting (HeTech 2011)