RONCHI, NICOLO'

RONCHI, NICOLO'  

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Risultati 1 - 20 di 27 (tempo di esecuzione: 0.044 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 2010 RONCHI, NICOLO'MENEGHINI, MATTEOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Book of abstract of Hetech 2010
An investigation of defects and reliability issues on Gallium Nitride devices 2012 Ronchi, Nicolò - - -
An investigation of reliability on hybrid substrates GaN-HEMTs 2008 ZANON, FRANCORONCHI, NICOLO'DANESIN, FRANCESCASTOCCO, ANTONIOMENEGHESSO, GAUDENZIO + - - -
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 2010 ZANONI, ENRICOSTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANARONCHI, NICOLO'TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - 5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 2011 MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. Of the 38th International Symposium on Compound Semiconductors – ISCS 2011
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 2011 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIORAMPAZZO, FABIANASILVESTRI, RICCARDOROSSETTO, ISABELLARONCHI, NICOLO' - - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting; Boston, MA; United States; 9 October 2011 through 14 October 2011; Code 88574
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 2011 STOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 2011 MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - IEEE International Electron Device Meeting (IEDM 2011)
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 2010 MENEGHINI, MATTEOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
GaN Hemt Degradation induced by Reverse Gate Bias Stress 2009 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOZANONI, ENRICO + - - Proceedings of International Conference on Nitride Semiconductors (ICNS 2009)
High Robustness GaN HEMT Subject to Reverse Bias Stress 2010 STOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 2011 RAMPAZZO, FABIANASTOCCO, ANTONIOSILVESTRI, RICCARDOMENEGHINI, MATTEORONCHI, NICOLO'BISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO - - IEEE IRPS2012, International Reliability Physics Symposium
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 2011 MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 2010 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'ZANONI, ENRICO + - - WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
Latest reliability results in GaN HEMTs devices 2011 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHINI, MATTEOZANONI, ENRICO - - The Workshop on Compound Semiconductor Materials and Devices
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 2009 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOZANON, FRANCO - - -
New reliability understanding on GaN-HEMTs 2010 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHINI, MATTEOTAZZOLI, AUGUSTOZANONI, ENRICO - - The Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010,