We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad hoc designed MOSFETs with different metal layouts.We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.

Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

GRIFFONI, ALESSIO;SILVESTRI, MARCO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;
2009

Abstract

We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad hoc designed MOSFETs with different metal layouts.We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2438546
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