In this paper we present the correlation between the impact ionization gate current with the S22 scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y22 at low frequencies.
Titolo: | Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm |
Autori: | |
Data di pubblicazione: | 2004 |
Abstract: | In this paper we present the correlation between the impact ionization gate current with the S22 scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y22 at low frequencies. |
Handle: | http://hdl.handle.net/11577/2440801 |
ISBN: | 0780385950 |
Appare nelle tipologie: | 04.01 - Contributo in atti di convegno |
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