In this paper we report a reliability study of optimized AlGaN/GaN HEMTs submitted to high bias voltages. In these devices, thanks to improved epilayers structures, gate Field Plate and GaN cap layer, no significant degradation has been observed after drain-gate biased up to 200 V. Four different GaN buffers have been adopted, with different quality properties, and the unexpected high device robustness has been observed in all the three wafers.

High Robustness GaN HEMT Subject to Reverse Bias Stress

STOCCO, ANTONIO;RONCHI, NICOLO';MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2010

Abstract

In this paper we report a reliability study of optimized AlGaN/GaN HEMTs submitted to high bias voltages. In these devices, thanks to improved epilayers structures, gate Field Plate and GaN cap layer, no significant degradation has been observed after drain-gate biased up to 200 V. Four different GaN buffers have been adopted, with different quality properties, and the unexpected high device robustness has been observed in all the three wafers.
WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2446589
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