This work aims to propose a novel method to accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar degradation in electrical performances. Electrical measurements, RF simulations, and AFM analysis of surface roughness were carried out to verify the proposed method.

Accelerated testing of RF-MEMS contact degradation through radiation sources

TAZZOLI, AUGUSTO;BARBATO, MARCO;GILIBERTO, VALENTINA;GERARDIN, SIMONE;NICOLOSI, PIERGIORGIO;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO
2010

Abstract

This work aims to propose a novel method to accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar degradation in electrical performances. Electrical measurements, RF simulations, and AFM analysis of surface roughness were carried out to verify the proposed method.
IRPS2010, International Reliability Physics Symposium
9781424454310
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2446751
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