We have investigated the robustness of GaN-HEMT devices submitted to ESD events in different configurations. A good scaling of the failure current with the device width has been observed for both drain and gate TLP stresses. We have identified two failure mechanisms, related to the gate-source diode degradation and drain to gate filaments formation. Filaments formation was identified by means of emission microscopy, both while applying DC bias and during the TLP measurement itself. We have also found that the traditional TLP leakage measurement can not be used as a valid failure criterion. On the contrary, the gate-source diode measurement can provide interesting information on the device life-state.

ESD Robustness of AlGaN/GaN HEMT Devices

TAZZOLI, AUGUSTO;DANESIN, FRANCESCA;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2007

Abstract

We have investigated the robustness of GaN-HEMT devices submitted to ESD events in different configurations. A good scaling of the failure current with the device width has been observed for both drain and gate TLP stresses. We have identified two failure mechanisms, related to the gate-source diode degradation and drain to gate filaments formation. Filaments formation was identified by means of emission microscopy, both while applying DC bias and during the TLP measurement itself. We have also found that the traditional TLP leakage measurement can not be used as a valid failure criterion. On the contrary, the gate-source diode measurement can provide interesting information on the device life-state.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2447556
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 29
  • ???jsp.display-item.citation.isi??? ND
social impact