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EnglishResults related to electrical instabilities in AlGaN/GaN HEMTs will be presented. We have observed a large drain current and transconductance collapse, after the devices are biased in the dark at high VDS; end-resistance measurements and measurements with inverted source and drain confirm that trapping occurs in the gate-drain access region, giving rise to an increase in the parasitic drain series resistance.
| Titolo: | Current Collapse in AlGaN/GaN HEMTs |
| Autori: | |
| Data di pubblicazione: | 2001 |
| Abstract: | Results related to electrical instabilities in AlGaN/GaN HEMTs will be presented. We have observed a large drain current and transconductance collapse, after the devices are biased in the dark at high VDS; end-resistance measurements and measurements with inverted source and drain confirm that trapping occurs in the gate-drain access region, giving rise to an increase in the parasitic drain series resistance. |
| Handle: | http://hdl.handle.net/11577/2462249 |
| Appare nelle tipologie: | 04.01 - Contributo in atti di convegno |
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