The BVDS ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current are correlated with conventional measurements of gate current due to impact-ionization. The influence of thermal eects on breakdown DC measurements is demonstrated. By adopting pulsed measurements, we confirm that on-state breakdown voltage of InP HEMTs decreases by increasing the temperature, while the opposite occurs in GaAs based MESFETs and HEMTs. We show that DC measurements are not suitable for evaluating on-state breakdown of power MESFETs and HEMTs, and we propose pulsed measurements as a viable alternative.
DC and Pulsed measurements of on-state breakdown voltage
MENEGHESSO, GAUDENZIO;BUTTARI, DARIO;ZANONI, ENRICO
1999
Abstract
The BVDS ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current are correlated with conventional measurements of gate current due to impact-ionization. The influence of thermal eects on breakdown DC measurements is demonstrated. By adopting pulsed measurements, we confirm that on-state breakdown voltage of InP HEMTs decreases by increasing the temperature, while the opposite occurs in GaAs based MESFETs and HEMTs. We show that DC measurements are not suitable for evaluating on-state breakdown of power MESFETs and HEMTs, and we propose pulsed measurements as a viable alternative.File in questo prodotto:
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