The aim of this work is to investigate the effects of near ultraviolet irradiation (between 310 and 400nm) on pentacene-based organic thin film transistors. We focused on the immediate UV-irradiation effects and on the damage-stability over time, at room-temperature. We studied the threshold voltage, the transconductance peak, the I-V hysteresis and the saturation drain current, providing a first order model for the degradation kinetics
Near-Uv Irradiation Effects On Pentacene Based Organic Thin Film Transistors
WRACHIEN, NICOLA;CESTER, ANDREA;BARI, DANIELE;MENEGHESSO, GAUDENZIO;
2011
Abstract
The aim of this work is to investigate the effects of near ultraviolet irradiation (between 310 and 400nm) on pentacene-based organic thin film transistors. We focused on the immediate UV-irradiation effects and on the damage-stability over time, at room-temperature. We studied the threshold voltage, the transconductance peak, the I-V hysteresis and the saturation drain current, providing a first order model for the degradation kineticsFile in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
