The use of high brightness Deep UV LEDs has open the road to new products in medical, biological and other important fields. Unfortunately their reliability is still an issue, and no clear information are available in literature on the degradation mechanisms of these devices. With this work we demonstrate that the degradation of AlGaN DUV LED devices emitting at 310nm submitted to constant current stress is strictly correlated to variation in parasitic recombination peaks appearing in the electroluminescence and photocurrent spectra of the device

Study of the degradation of Deep-UV LEDs by, “Electroluminescence and Photocurrent Spectroscopy Measurements

TRIVELLIN, NICOLA;MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2011

Abstract

The use of high brightness Deep UV LEDs has open the road to new products in medical, biological and other important fields. Unfortunately their reliability is still an issue, and no clear information are available in literature on the degradation mechanisms of these devices. With this work we demonstrate that the degradation of AlGaN DUV LED devices emitting at 310nm submitted to constant current stress is strictly correlated to variation in parasitic recombination peaks appearing in the electroluminescence and photocurrent spectra of the device
2011
9th International Conference on Nitride Semiconductors (ICNS-9)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2478102
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