Time and field-dependent trapping in AlGaN/GaN E-mode transistors

Recently, GaN-based Gate-Injection Transistors (GITs) have emerged as excellent normally-off devices for power applications. Thanks to their high robustness, GITs are ideal devices for the investigation of trapping phenomena occurring at high drain voltage. The aim of this paper is to describe a time and field-dependent trapping mechanism that takes place at high drain voltage levels in GITs. The analysis was carried out by combined electrical and time-resolved electroluminescence (EL) measurements.